jiejie microelectronics co. , ltd tel +86 - 513 - 83639777 - 1 / 6 - http://www.jjwdz.com j ct 6 1 0 /81 0 series 1 0 a scr s rev. 3 .0 description: jct610/810 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large c urrent, provide high dv/dt rate with strong resistance to electromagnetic interference. they are especially recommended for use on solid state relay, motorcycle, power charger, t - tools etc. jct x 10 a provides insulation voltage rated at 2500v rms and jct x 10f provides insulation voltage rated at 2000v rms from all three terminals to external he a tsink . jct x 10a/ jct x 10f series comply with ul standards (file ref: e252906). main features symbol jct610 jct810 v drm / v rrm 600v 800v i t(rms) 10a i gt 10ma absolute maximum ratings parameter symbol value unit storage junction temperature range t stg - 40 - 1 50 operating junction temperature range t j - 40 - 125 repetitive peak off - state voltage (t j =25 ) v drm 600/800 v repetitive peak reverse voltage (t j =25 ) v rrm 600/800 v non repetitive surge peak off - state voltage v dsm v drm +100 v non repetitive peak reverse voltage v rsm v r rm +100 v rms on - state current to - 251/ to - 252 (t c = 105 ) i t( rms ) 10 a to - 220b(non - ins) ( t c = 110 ) to-252 to-251 a(2) k(1) g(3) to-220b non-insulated to-220a insulated to-220f insulated 1 1 1 1 1 2 2 2 2 2 3 3 3 3 3
j ct 61 0 /81 0 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 2 / 6 - http://www.jjwdz.com rms on - state current to - 220a(ins) / to - 220f(ins) (t c = 85 ) i t( rms ) 10 a non repetitive surge peak on - state current (tp=10ms) i tsm 120 a i 2 t value for fusing (tp=10m s ) i 2 t 72 a 2 s critical rate of rise of on - state current (i g =2 i gt ) di/dt 50 a / s peak gate current i gm 4 a average gate power dissipation p g(av) 1 w peak gate power p gm 5 w electrical characteristics (t j =25 unless otherwise specified ) symbol test condition value unit min. typ. max. i gt v d =12v r l =33 - - 10 ma v gt - - 1.5 v v gd v d =v drm t j =125 r l =3.3k 0.2 - - v i l i g = 1.2 i g t - - 25 ma i h i t = 500m a - - 15 ma dv/dt v d =2/3v drm gate ope n t j = 125 50 - - v / s static characteristics symbol parameter value(max) unit v tm i t m = 20 a tp= 380 s t j =25 1.55 v i drm v d =v d rm v r =v r rm t j =25 5 a i rrm t j =1 25 1 ma
j ct 61 0 /81 0 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 3 / 6 - http://www.jjwdz.com thermal resistances symbol parameter value unit r th(j - c) junction to case(ac) to - 220 a (ins) / to - 220f (ins) 4.8 /w to - 220 b (non - ins) 1.2 to - 2 51/ to - 252 2.5 ordering information package mechanical data j c t 6 1 0 b j i e j i e m i c r o e l e c t r o n i c s c o . , l t d s c r s 6 : v d r m / v r r m 6 0 0 v 8 : v d r m / v r r m 8 0 0 v i t ( r m s ) : 1 0 a a : t o - 2 2 0 a ( i n s ) f : t o - 2 2 0 f ( i n s ) b : t o - 2 2 0 b ( n o n - i n s ) h : t o - 2 5 1 k : t o - 2 5 2 a d e h g b c c2 max 3.5mm c3 v1 l3 l2 f l1 dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.74 0.48 2.40 4.80 0.83 0.75 2.70 0.173 0.029 0.019 0.094 0.189 0.033 0.030 0.106 2.60 3.00 9.70 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.102 0.118 8.80 9.30 2.54 0.1 v1 0.346 0.366 10.3 0.382 0.406 6.40 7.00 0.252 0.276 3.30 0.130 45 3.63 0.143 0.80 0.031 45 to-220f ins
j ct 61 0 /81 0 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 4 / 6 - http://www.jjwdz.com package mechanical data a c2 f c3 c e l3 l1 g b l2 d h v1 max 3.8mm dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.80 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 v1 0.339 0.382 10.4 0.386 0.409 6.55 6.95 0.258 0.274 2.65 2.95 0.104 0.116 45 45 3.75 0.148 to-220a ins jie a c2 f c3 c e l3 l1 g b l2 d h v1 max 3.8mm dimensions millimeters inches ref. min. typ. max. min. typ. max. a b c c2 c3 d e f g h l1 l2 l3 4.40 0.61 0.46 1.21 4.60 0.88 0.70 1.32 0.173 0.024 0.018 0.048 0.181 0.035 0.028 0.052 2.40 2.72 9.60 28.0 29.8 1.102 1.173 1.14 1.70 0.045 0.067 0.094 0.107 8.60 9.70 2.54 0.1 v1 0.339 0.382 10.4 0.378 0.409 6.20 6.60 0.244 0.260 2.65 2.95 0.104 0.116 45 45 3.75 0.148 to-220b non-ins
j ct 61 0 /81 0 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 5 / 6 - http://www.jjwdz.com package mechanical data a v1 v1 v1 d c2 c a2 e b2 l2 h l g l1 b b3 dimensions millimeters inches ref. min. typ. max. min. typ. max. a a2 b b2 b3 c c2 d e g h l l1 2.20 0.90 0.55 5.10 2.40 1.20 0.65 5.40 0.086 0.035 0.022 0.200 0.095 0.047 0.026 0.213 0.76 0.85 0.48 6.40 6.70 0.252 0.264 16.0 17.0 0.630 0.669 8.90 9.40 0.350 0.370 0.030 0.033 0.45 0.62 2.30 0.091 l2 v1 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.80 1.90 0.071 0.075 4 4 to-251 a v1 v1 v1 d c2 e b2 l2 h 0.6 min a2 c l1 g b dimensions millimeters inches ref. min. typ. max. min. typ. max. a a2 b b2 c c2 d e g h l1 2.20 0.03 0.55 5.10 2.40 0.23 0.65 5.40 0.086 0.001 0.022 0.200 0.095 0.009 0.026 0.213 0.48 6.40 6.70 0.252 0.264 9.35 10.6 0.368 0.417 0.45 0.62 l2 v1 1.37 1.50 0.054 0.059 0.018 0.024 0.62 0.019 0.024 6.00 6.20 0.236 0.244 1.30 1.70 0.051 0.067 4 4 4.40 4.70 0.173 0.185 v2 0 8 0 8 v2 to-252
j ct 61 0 /81 0 series j ie j ie m icroelectronics co. , ltd tel +86 - 513 - 83639777 - 6 / 6 - http://www.jjwdz.com information furnished in this document is believed to be accurate and reliable . however, jiangsu jiejie microelectronics co.,ltd assumes no responsibility for the consequences of use without consideration for such information nor use beyond it. information mentioned in this document is subject to change without notice, apart from that when an agreement is signed, jiangsu jiejie complies with the agreement. products and information provided in this document have no infringement of patents. jiangs u jiejie assumes no responsibility for any infringement of other rights of third parties which may result from the use of such products and information. this document is the third version which is made in 5 - june - 201 5 . this document supersedes and replaces all information previously supplied. is a registered trademark of jiangsu jiejie microelectronics co.,ltd. copyright ? 201 5 jiangsu jiejie microelectronics co.,ltd. printed all rights reserved. fig.1 maximum power dissipation versus rms on-state current fig.2: rms on-state current versus case temperature i t(rms) (a) p(w) 0 2 4 6 8 10 0 i t(rms) (a) tc ( ) 0 0 25 50 75 100 125 10 12 5 10 15 2 4 6 to-220a(ins)/ to-220f(ins) to-251/ to-252 to-220b (non-ins) 8 =180 fig.3: surge peak on-state current versus number of cycles fig.4: on-state characteristics (maximum values) 1 10 100 1000 number of cycles 0 20 i tsm (a) i tm (a) v tm (v) 0 1 2 3 4 5 1 10 tj=25 40 60 80 100 120 140 100 tj=125 one cycle tp=10ms fig.6: relative variations of gate trigger current, holding current and latching current versus junction temperature fig.5: non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of i t (di/dt < 50a / s) tp(ms) 0.01 0.1 1 10 10 i tsm (a), i t (a s) -40 -20 0 20 40 60 80 100 120 140 i gt ,i h ,i l (tj)/i gt ,i h ,i l (tj=25 ) 0.0 0.5 1.5 2.0 3.0 2 2 2 i h &i l 1.0 2.5 tj( ) 10 3 10 2 i t 2 i tsm i gt di/dt
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